在這個(gè)快速變化的時(shí)代里,高科技推進(jìn)技術(shù)的進(jìn)步,同時(shí)也帶來(lái)生活,娛樂(lè),日用方便的便攜,隨處可見的機(jī)會(huì),但并不是人人都能夠抓住,亞陶公司優(yōu)秀的技術(shù)人員能夠在市場(chǎng)上,找到適合的機(jī)遇,并且結(jié)合自身的優(yōu)勢(shì),開發(fā)出增強(qiáng)型,適用于各個(gè)領(lǐng)域高質(zhì)量的SPXO有源晶振,加速豐富自身的產(chǎn)品線,在品質(zhì)方面也達(dá)到無(wú)懈可擊,無(wú)人可及的高標(biāo)準(zhǔn)和高要求。亞陶開發(fā)出溫度穩(wěn)定性能極好的TCXO振蕩器WT3253F0026.000000,用于網(wǎng)絡(luò)系統(tǒng),ECERA晶振

WT3251I0026.000000	Diodes晶振	SaRonix-eCera™ WT	26MHz	±2ppm	-30°C ~ 85°C
WT325BI0032.000000	Diodes晶振	SaRonix-eCera™ WT	32MHz	±2ppm	-30°C ~ 85°C
WT325BI0032.000000	Diodes晶振	SaRonix-eCera™ WT	32MHz	±2ppm	-30°C ~ 85°C
WT325BI0032.000000	Diodes晶振	SaRonix-eCera™ WT	32MHz	±2ppm	-30°C ~ 85°C
WT3253I0026.000000	Diodes晶振	SaRonix-eCera™ WT	26MHz	±2ppm	-30°C ~ 85°C
WT3253I0026.000000	Diodes晶振	SaRonix-eCera™ WT	26MHz	±2ppm	-30°C ~ 85°C
WT3253I0026.000000	Diodes晶振	SaRonix-eCera™ WT	26MHz	±2ppm	-30°C ~ 85°C
WT325CF0019.200000	Diodes晶振	SaRonix-eCera™ WT	19.2MHz	±500ppb	-30°C ~ 85°C
WT325CF0019.200000	Diodes晶振	SaRonix-eCera™ WT	19.2MHz	±500ppb	-30°C ~ 85°C
WT325CF0019.200000	Diodes晶振	SaRonix-eCera™ WT	19.2MHz	±500ppb	-30°C ~ 85°C
WT3253F0026.000000	Diodes晶振	SaRonix-eCera™ WT	26MHz	±500ppb	-30°C ~ 85°C
WT3253F0026.000000	Diodes晶振	SaRonix-eCera™ WT	26MHz	±500ppb	-30°C ~ 85°C
WT3253F0026.000000	Diodes晶振	SaRonix-eCera™ WT	26MHz	±500ppb	-30°C ~ 85°C
WT325CF0016.368000	Diodes晶振	SaRonix-eCera™ WT	16.368MHz	±500ppb	-30°C ~ 85°C
WT325CF0016.368000	Diodes晶振	SaRonix-eCera™ WT	16.368MHz	±500ppb	-30°C ~ 85°C
WT325CF0016.368000	Diodes晶振	SaRonix-eCera™ WT	16.368MHz	±500ppb	-30°C ~ 85°C
WT3251F0016.369000	Diodes晶振	SaRonix-eCera™ WT	16.369MHz	±500ppb	-30°C ~ 85°C
WT3251F0016.369000	Diodes晶振	SaRonix-eCera™ WT	16.369MHz	±500ppb	-30°C ~ 85°C
WT3251F0016.369000	Diodes晶振	SaRonix-eCera™ WT	16.369MHz	±500ppb	-30°C ~ 85°C

Diodes公司（納斯達(dá)克股票代碼：DIOD）宣布推出高精度晶振，以及五款具有集成高側(cè)和低側(cè)MOSFET的同步降壓轉(zhuǎn)換器，提供具有3.5A或 5A 連續(xù)輸出電流的負(fù)載點(diǎn) (PoL) 解決方案。這些器件采用專有柵極驅(qū)動(dòng)器技術(shù)，可為消費(fèi)類、工業(yè)、網(wǎng)絡(luò)和汽車應(yīng)用在降壓DC-DC轉(zhuǎn)換中提供卓越的EMI 性能。

WT3251I0016.367667	Diodes晶振	SaRonix-eCera™ WT	16.367667MHz	±2ppm	-30°C ~ 85°C
WT3251I0016.367667	Diodes晶振	SaRonix-eCera™ WT	16.367667MHz	±2ppm	-30°C ~ 85°C
WT3251I0016.367667	Diodes晶振	SaRonix-eCera™ WT	16.367667MHz	±2ppm	-30°C ~ 85°C
WT325CI0016.367667	Diodes晶振	SaRonix-eCera™ WT	16.367667MHz	±2ppm	-30°C ~ 85°C
WT325CI0016.367667	Diodes晶振	SaRonix-eCera™ WT	16.367667MHz	±2ppm	-30°C ~ 85°C
WT325CI0016.367667	Diodes晶振	SaRonix-eCera™ WT	16.367667MHz	±2ppm	-30°C ~ 85°C
WT325CI0016.368000	Diodes晶振	SaRonix-eCera™ WT	16.368MHz	±2ppm	-30°C ~ 85°C
WT325CI0016.368000	Diodes晶振	SaRonix-eCera™ WT	16.368MHz	±2ppm	-30°C ~ 85°C
WT325CI0016.368000	Diodes晶振	SaRonix-eCera™ WT	16.368MHz	±2ppm	-30°C ~ 85°C
WT325CI0016.369000	Diodes晶振	SaRonix-eCera™ WT	16.369MHz	±2ppm	-30°C ~ 85°C
WT325CI0016.369000	Diodes晶振	SaRonix-eCera™ WT	16.369MHz	±2ppm	-30°C ~ 85°C
WT325CI0016.369000	Diodes晶振	SaRonix-eCera™ WT	16.369MHz	±2ppm	-30°C ~ 85°C

AP64350 、AP64351和AP64352的靜態(tài)電流 (Iq) 為 22μA，而AP64500和AP64501的 Iq僅為25μA。亞陶晶振推出所有器件均具有低RDS(ON) 并在 3.8V 和40V之間的電源電壓下工作，并提供低壓差 (LDO) 模式。除了優(yōu)化的柵極驅(qū)??動(dòng)器設(shè)計(jì)外，這些部件還采用擴(kuò)頻拓?fù)浣Y(jié)構(gòu)來(lái)進(jìn)一步降低 EMI。

此外，AP64351和AP64501實(shí)現(xiàn)了可編程軟啟動(dòng)，可以減輕浪涌電流和跟蹤的影響，從而更有效地實(shí)施電源排序。
開關(guān)頻率可在100kHz和2.2MHz之間調(diào)節(jié)。這種可調(diào)頻率允許工程師根據(jù)效率、外部組件的尺寸或射頻與其他系統(tǒng)級(jí)功能的兼容性，為其應(yīng)用選擇最合適的配置。亞陶開發(fā)出溫度穩(wěn)定性能極好的TCXO振蕩器WT3253F0026.000000,用于網(wǎng)絡(luò)系統(tǒng),ECERA晶振

FNETHE025	Diodes晶振	SaRonix-eCera™ ASSP XO™	25MHz	±25ppm	-20°C ~ 70°C
FNETHE025	Diodes晶振	SaRonix-eCera™ ASSP XO™	25MHz	±25ppm	-20°C ~ 70°C
FNETHE025	Diodes晶振	SaRonix-eCera™ ASSP XO™	25MHz	±25ppm	-20°C ~ 70°C
FNSURV027	Diodes晶振	SaRonix-eCera™ ASSP XO™	27MHz	±30ppm	-20°C ~ 70°C
FNSURV027	Diodes晶振	SaRonix-eCera™ ASSP XO™	27MHz	±30ppm	-20°C ~ 70°C
FNSURV027	Diodes晶振	SaRonix-eCera™ ASSP XO™	27MHz	±30ppm	-20°C ~ 70°C
FNGEPO002	Diodes晶振	SaRonix-eCera™ ASSP XO™	2.048MHz	±50ppm	-20°C ~ 70°C
FNGEPO002	Diodes晶振	SaRonix-eCera™ ASSP XO™	2.048MHz	±50ppm	-20°C ~ 70°C
FNGEPO002	Diodes晶振	SaRonix-eCera™ ASSP XO™	2.048MHz	±50ppm	-20°C ~ 70°C
FKSSD1025	Diodes晶振	SaRonix-eCera™ ASSP XO™	25MHz	±25ppm	-10°C ~ 70°C
FKSSD1025	Diodes晶振	SaRonix-eCera™ ASSP XO™	25MHz	±25ppm	-10°C ~ 70°C
FKSSD1025	Diodes晶振	SaRonix-eCera™ ASSP XO™	25MHz	±25ppm	-10°C ~ 70°C
UJWIFI026	Diodes晶振	SaRonix-eCera™ ASSP XO™	26MHz	±20ppm	-30°C ~ 85°C
UJWIFI026	Diodes晶振	SaRonix-eCera™ ASSP XO™	26MHz	±20ppm	-30°C ~ 85°C
UJWIFI026	Diodes晶振	SaRonix-eCera™ ASSP XO™	26MHz	±20ppm	-30°C ~ 85°C
FNEPON125	Diodes晶振	SaRonix-eCera™ ASSP XO™	125MHz	±50ppm	-20°C ~ 70°C
FNEPON125	Diodes晶振	SaRonix-eCera™ ASSP XO™	125MHz	±50ppm	-20°C ~ 70°C
FNEPON125	Diodes晶振	SaRonix-eCera™ ASSP XO™	125MHz	±50ppm	-20°C ~ 70°C
FK1330001Z	Diodes晶振	SaRonix-eCera™ FK	13.3333MHz	±25ppm	-40°C ~ 85°C
FK1330001Z	Diodes晶振	SaRonix-eCera™ FK	13.3333MHz	±25ppm	-40°C ~ 85°C
FK1330001Z	Diodes晶振	SaRonix-eCera™ FK	13.3333MHz	±25ppm	-40°C ~ 85°C

AP64350、AP64351、AP64352、AP64500和AP64501采用SO-8EP封裝。